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BTA2008W-600D Datasheet, PDF (9/14 Pages) NXP Semiconductors – 3Q Hi-Com Triac
NXP Semiconductors
BTA2008W-600D
3Q Hi-Com Triac
3
IGT
IGT(25°C)
2
(1)
(2)
(3)
1
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3
IL
IL(25°C)
2
1
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0
- 50
0
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
(3)
(2)
(1)
50
100 Tj (°C) 150
0
-50
0
50
100
150
Tj (°C)
Fig. 10. Normalized latching current as a function of
junction temperature
Fig. 9. Normalized gate trigger current as a function of
junction temperature
3
IH
IH(25°C)
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1
IT
(A)
0.8
003aac114
2
0.6
0.4
(1)
(2) (3)
1
0.2
0
-50
0
50
100
150
Tj (°C)
Fig. 11. Normalized holding current as a function of
junction temperature
0
0
0.5
1
1.5
2
VT (V)
Vo = 0.835 V; Rs = 0.50 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 12. On-state current as a function of on-state
voltage
BTA2008W-600D
Product data sheet
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14 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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