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BFU530X_15 Datasheet, PDF (9/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU530X
NPN wideband silicon RF transistor
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Tamb = 25 ï°C.
(1) VCE = 3.3 V
(2) VCE = 5.0 V
(3) VCE = 8.0 V
(4) VCE = 12.0 V
Fig 9. Transition frequency as a function of collector current; typical values
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IC = 10 mA; VCE = 8 V; Tamb = 25 ï°C.
IC = 15 mA; VCE = 8 V; Tamb = 25 ï°C.
Fig 10. Gain as a function of frequency; typical values Fig 11. Gain as a function of frequency; typical values
BFU530X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 5 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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