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BFU530X_15 Datasheet, PDF (15/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU530X
NPN wideband silicon RF transistor
Â
VCE = 8 V; 400 MHz ï£ f ï£ 2 GHz.
(1) IC = 1 mA
(2) IC = 2 mA
(3) IC = 3 mA
(4) IC = 5 mA
(5) IC = 10 mA
(6) IC = 15 mA
(7) IC = 20 mA
(8) IC = 25 mA
Fig 24. Optimum reflection coefficient (ïopt); typical values
DDD
10. Application information
More information about the following application example can be found in the application
notes. See Section 5 âDesign supportâ.
The following application example can be implemented using the evaluation kit. See
Section 3 âOrdering informationâ for the order type number.
The following application example can be simulated using the simulation package. See
Section 5 âDesign supportâ.
BFU530X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 5 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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