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| BFU520W_15 Datasheet, PDF (9/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU520W
NPN wideband silicon RF transistor
I7
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DDD
,& P$
Tamb = 25 ï°C.
(1) VCE = 3.3 V
(2) VCE = 5.0 V
(3) VCE = 8.0 V
(4) VCE = 12.0 V
Fig 9. Transition frequency as a function of collector current; typical values
*
G%
06*
DDD
*
G%
06*
*S PD[
_V_
06*
_V_
DDD
*S PD[
06*
I 0+]
I 0+]
IC = 5 mA; VCE = 8 V; Tamb = 25 ï°C.
IC = 10 mA; VCE = 8 V; Tamb = 25 ï°C.
Fig 10. Gain as a function of frequency; typical values Fig 11. Gain as a function of frequency; typical values
BFU520W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 13 January 2014
© NXP B.V. 2014. All rights reserved.
9 of 22
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