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BFU520W_15 Datasheet, PDF (5/22 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
Table 9. Characteristics â¦continued
Tamb = 25 ï°C unless otherwise specified
Symbol Parameter
Gp(max) maximum power gain
ï¼s21ï¼2
insertion power gain
NFmin minimum noise figure
BFU520W
NPN wideband silicon RF transistor
Conditions
f = 433 MHz; VCE = 8 V
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 900 MHz; VCE = 8 V
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 1800 MHz; VCE = 8 V
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 433 MHz; VCE = 8 V
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 900 MHz; VCE = 8 V
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 1800 MHz; VCE = 8 V
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 433 MHz; VCE = 8 V; ïS = ïopt
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 900 MHz; VCE = 8 V; ïS = ïopt
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 1800 MHz; VCE = 8 V; ïS = ïopt
IC = 1 mA
IC = 5 mA
IC = 10 mA
Min Typ Max Unit
[1]
- 16 - dB
- 22.5 - dB
- 24 - dB
[1]
- 13 - dB
- 18.5 - dB
- 19.5 - dB
[1]
- 11 - dB
- 14 - dB
- 13 - dB
- 10.5 - dB
- 20 - dB
- 22 - dB
- 9 - dB
- 15.5 - dB
- 16.5 - dB
- 6 - dB
- 10.5 - dB
- 11 - dB
- 0.5 - dB
- 0.7 - dB
- 0.9 - dB
- 0.6 - dB
- 0.8 - dB
- 0.9 - dB
- 0.8 - dB
- 0.9 - dB
- 1.0 - dB
BFU520W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 13 January 2014
© NXP B.V. 2014. All rights reserved.
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