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| BF1208 Datasheet, PDF (9/22 Pages) NXP Semiconductors – Dual N-channel dual gate MOSFET | |||
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Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
28
ID
(mA)
20
12
001aac197
102
bis, gis
(mS)
10
1
10â1
001aac566
bis
gis
4
0
10
20
30
40
50
gain reduction (dB)
10â2
10
102
103
f (MHz)
VDS(A) = VDS(B) = 5 V; VG1-S(B) = 0 V; f = 50 MHz;
Tamb = 25 °C; see Figure 33.
Fig 12. Ampliï¬er A: drain current as a function of gain
reduction; typical values
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 19 mA
Fig 13. Ampliï¬er A: input admittance as a function of
frequency; typical values
102
|yfs|
(mS)
001aac567 â102
|yfs|
Ïfs
(deg)
103
|yrs|
(µS)
102
001aac568 â103
Ïrs
(deg)
Ïrs
â102
10
â10
Ïfs
|yrs|
10
â10
1
â1
1
â1
10
102
103
10
102
103
f (MHz)
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 19 mA
Fig 14. Ampliï¬er A: forward transfer admittance and
phase as a function of frequency; typical values
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V;
ID(A) = 19 mA
Fig 15. Ampliï¬er A: reverse transfer admittance and
phase as a function of frequency; typical values
9397 750 14254
Product data sheet
Rev. 01 â 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
9 of 22
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