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| BF1208 Datasheet, PDF (10/22 Pages) NXP Semiconductors – Dual N-channel dual gate MOSFET | |||
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Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
10
bos, gos
(mS)
1
10â1
001aac569
bos
gos
10â2
10
102
103
f (MHz)
VDS(A) = 5 V; VG2-S = 4 V; VDS(B) = VG1-S(B) = 0 V; ID(A) = 19 mA
Fig 16. Ampliï¬er A: output admittance as a function of frequency; typical values
8.1.2 Scattering parameters for ampliï¬er A
Table 9: Scattering parameters for ampliï¬er A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.
f
(MHz)
s11
Magnitude
(ratio)
Angle
(deg)
s21
Magnitude
(ratio)
Angle
(deg)
s12
Magnitude
(ratio)
Angle
(deg)
s22
Magnitude
(ratio)
Angle
(deg)
50
0.991
â3.86 3.08
175.91 0.0009
77.41 0.992
â1.41
100 0.990
â7.73 3.03
171.76 0.0019
78.10 0.991
â2.81
200 0.986
â15.43 2.99
163.68 0.0037
78.39 0.990
â5.57
300 0.980
â22.98 2.94
155.54 0.0054
73.53 0.989
â8.34
400 0.970
â30.44 2.89
147.55 0.0070
68.74 0.986
â11.08
500 0.960
â37.60 2.82
139.76 0.0085
63.64 0.983
â13.78
600 0.948
â44.62 2.75
132.16 0.0098
59.62 0.980
â16.45
700 0.935
â51.44 2.67
124.70 0.0110
55.09 0.977
â19.10
800 0.921
â58.04 2.58
117.39 0.0120
50.79 0.973
â21.69
900 0.908
â64.41 2.50
110.20 0.0128
46.62 0.970
â24.28
1000 0.894
â70.49 2.40
103.31 0.0135
42.78 0.967
â26.87
8.1.3 Noise data for ampliï¬er A
Table 10: Noise data for ampliï¬er A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values;
unless otherwise speciï¬ed.
f (MHz)
NFmin (dB)
Îopt
ratio
(deg)
rn (â¦)
400
1.3
0.718
16.06
0.683
800
1.4
0.677
37.59
0.681
9397 750 14254
Product data sheet
Rev. 01 â 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10 of 22
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