2N7002BKV_15 Datasheet, PDF (9/16 Pages) NXP Semiconductors – 60 V, 340 mA dual N-channel Trench MOSFET

NXP Semiconductors
2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
5.0
V_GS
(V)
4.0
017aaa047
3.0
2.0
1.0
0.0
0.0
0.2
0.4
0.6
0.8
Q_G (nC)
I_D = 300 mA; V_DD = 6 V; T_amb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
1.2
I_S
(A)
0.8
0.4
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 15. Gate charge waveform definitions
017aaa048
(1)
(2)
0.0
0.0
0.4
0.8
1.2
V_SD (V)
V_GS = 0 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
2N7002BKV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 September 2010
© NXP B.V. 2010. All rights reserved.
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