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2N7002BKV_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – 60 V, 340 mA dual N-channel Trench MOSFET | |||
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2N7002BKV
60 V, 340 mA dual N-channel Trench MOSFET
Rev. 2 â 22 September 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small
SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
 Logic-level compatible
 Very fast switching
 Trench MOSFET technology
 ESD protection up to 2 kV
 AEC-Q101 qualified
1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
VGS
ID
RDSon
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C;
VGS = 10 V
Tj = 25 °C;
VGS = 10 V;
ID = 500 mA
-
-
60
V
-
-
±20 V
[1] -
-
340 mA
-
1
1.6 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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