UMA1021AM Datasheet, PDF (8/16 Pages) NXP Semiconductors – Low-voltage frequency synthesizer for radio telephones

Philips Semiconductors
Low-voltage frequency synthesizer for
radio telephones
Product specification
UMA1021AM
SYMBOL
PARAMETER
CONDITIONS
Charge pump output; pin 2
V_o(compl)
I_o(err)
I_o(match)
I_L
compliance output voltage
output current error
sink-to-source current matching
leakage current
R_set = 5.6 kΩ
R_set = 5.6 kΩ
R_set = 5.6 kΩ
R_set = 5.6 kΩ;
charge pump off;
V_o(compl) = ¹â„₂V_CC
Phase noise
N₉₀₀
RF synthesizer’s contribution to
close-in phase noise of 900 MHz
VCO signal inside the closed loop
bandwidth
f_xtal = 13 MHz;
V_xtal = 0 dBm;
f_ph(comp) = 200 kHz
N_{1 800}
RF synthesizer’s contribution to
close-in phase noise of 1.8 GHz
VCO signal inside the closed loop
bandwidth
f_xtal = 13 MHz;
V_xtal = 0 dBm;
f_ph(comp) = 200 kHz
Interface logic inputs; pins 7, 9, 10 and 11
V_IH
V_IL
I_i(bias)
C_i
HIGH-level input voltage
LOW-level input voltage
input bias current
input capacitance
Out-of-lock detector output; pin 1
logic 1 or logic 0
V_OL
E_ϕ(th)
LOW-level output voltage
threshold phase error
open-drain output
open-drain output
MIN. TYP. MAX. UNIT
0.4
−
−25
−
−
±5
−5
±1
V_CC − 0.4 V
+25
%
−
%
+5
nA
−
−88
−
dBc/Hz
−
−82
−
dBc/Hz
0.7V_DD −
−0.3 −
−5
−
−
2
−
−
−
25
V_DD + 0.3 V
0.3V_DD V
+5
µA
−
pF
0.3V_DD V
−
ns
1998 Nov 19
8