TDA8764A Datasheet, PDF (8/24 Pages) NXP Semiconductors – 10-bit high-speed low-power ADC

Philips Semiconductors
10-bit high-speed low-power ADC
Product specification
TDA8764A
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
MAX.
Reference voltages for the resistor ladder; see Table 1
V_RB
V_RT
V_diff(ref)
I_ref
R_LAD
TC_RLAD
V_offset(B)
V_offset(T)
V_I(p-p)
reference voltage BOTTOM
reference voltage TOP
differential reference voltage
V_RT − V_RB
reference current
resistor ladder
temperature coefficient of the
resistor ladder
offset voltage BOTTOM
offset voltage TOP
analog input voltage
(peak-to-peak value)
V_diff = 2.4 V
V_diff = 2.4 V; note 3
V_diff = 2.4 V; note 3
V_diff = 2.4 V; note 4
1.2
3.4
2.2
−
−
−
−
−
−
1.95
1.3 2.2
3.7
V_CCA − 0.8
2.4 3.2
17.6 −
136 −
1860 −
253 −
200 −
190 −
2.01 2.10
Outputs
PINS D9 TO D0 AND IR (REFERENCED TO OGND)
V_OL
LOW-level output voltage
I_OL = 1 mA
V_OH
HIGH-level output voltage
I_OH = −1 mA
I_OZ
output current in 3-state mode 0.5 V < V_O < V_CCO
Switching characteristics
0
−
V_CCO − 0.5 −
−20
−
0.5
V_CCO
+20
PIN CLK; see Fig.5; note 1
f_clk(max)
t_CPH
t_CPL
maximum clock frequency
clock pulse width HIGH
clock pulse width LOW
Analog signal processing
T_amb = 25 °C
T_amb = 25 °C
60
−
−
7.0
−
−
3.5
−
−
LINEARITY
INL
DNL
integral non-linearity
differential non-linearity
f_clk = 60 MHz; ramp input −
f_clk = 60 MHz; ramp input; −
no missing code
E_offset
offset error
middle code
−
E_G
gain error (from device to device) note 5
−
±0.8 ±2
±0.35 ±0.9
±1
−
±0.5 −
UNIT
V
V
V
mA
Ω
ppm
mΩ/K
mV
mV
V
V
V
µA
MHz
ns
ns
LSB
LSB
LSB
%
2000 Jul 03
8