TDA8060TS Datasheet, PDF (8/16 Pages) NXP Semiconductors – Satellite ZERO-IF QPSK down-converter

Philips Semiconductors
Satellite ZERO-IF QPSK down-converter
Product specification
TDA8060TS
SYMBOL
PARAMETER
CONDITIONS MIN. TYP. MAX. UNIT
B_(−1dB)
B_(−3dB)
Z_o
V_o(p-p)
R_o(L)
channel −1 dB bandwidth
channel −3 dB bandwidth
output impedance
nominal output voltage level
resistive load at output
40 65 −
70 100 −
−
50 −
−
750 −
400 −
−
MHz
MHz
Ω
mV
Ω
Overall with a 100 nF capacitor instead of LP1 and LP2
t_{d(g)(I-Q)(40)}
group delay mismatch in 40 MHz band
between I and Q
−
0.5 2
ns
t_{d(g)(I-Q)(R40)}
G_v(I-Q)(40)
group delay ripple in 40 MHz band for I or Q
voltage gain mismatch in 40 MHz band
between I and Q
−
0.5 1
ns
−
−
1
dB
G_R(I-Q)(40)
voltage gain ripple in 40 MHz band for I or Q
−
−
1
dB
SYMMETRICAL RF INPUT
G_{v(RF-IBBOUT)(min)} minimum voltage gain from RF input to
pin IBBOUT
V_AGC = 0.1 x V_CC; −
−
19 dB
G_{v(RF-IBBOUT)(max)} maximum voltage gain from RF input to
pin IBBOUT
V_AGC = 0.9 x V_CC; 48 49 −
dB
G_{v(RF-QBBOUT)(min)} minimum voltage gain from RF input to
pin QBBOUT
V_AGC = 0.1 x V_CC; −
−
19 dB
G_{v(RF-QBBOUT)(max)} maximum voltage gain from RF input to
pin QBBOUT
V_AGC = 0.9 x V_CC; 48 49 −
dB
F_i
noise figure at maximum gain
V_AGC = 0.9 x V_CC; −
13 16 dB
Z_source = 50 Ω
ASYMMETRICAL RF INPUT
G_{v(RF-IBBOUT)(min)} minimum voltage gain from RF input to
pin IBBOUT
V_AGC = 0.1 x V_CC −
−
19 dB
G_{v(RF-IBBOUT)(max)} maximum voltage gain from RF input to
pin IBBOUT
V_AGC = 0.9 x V_CC −
49 −
dB
G_{v(RF-QBBOUT)(min)} minimum voltage gain from RF input to
pin QBBOUT
V_AGC = 0.1 x V_CC −
−
19 dB
G_{v(RF-QBBOUT)(max)} maximum voltage gain from RF input to
pin QBBOUT
V_AGC = 0.9 x V_CC −
49 −
dB
F_i
noise figure at maximum gain
V_AGC = 0.9 x V_CC; −
14 −
dB
Z_source = 50 Ω
Notes
1. Measured in baseband (at pin IOUT or pin QOUT) on a carrier at 2 MHz and 25 dBmV.
2. Quadrature error with respect to 90°.
3. The differential input impedance of the IC is 34 Ω in series with the IC pins which give an inductance of 5 nH.
For optimum performance, this inductance should be cancelled by a matching network. Coupling capacitors of 1 pF
give an acceptable result.
4. Gain = V_o(dB) − V_i(dB) (see Fig.3). Gain for symmetrical RF input
5. Gain = V_o(dB) − V_i(dB) (see Fig.3). Gain for asymmetrical RF input
1999 Aug 30
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