TDA8060TS Datasheet, PDF (6/16 Pages) NXP Semiconductors – Satellite ZERO-IF QPSK down-converter

Philips Semiconductors
Satellite ZERO-IF QPSK down-converter
Product specification
TDA8060TS
AC CHARACTERISTICS
T_amb = 25 °C; V_CC = 5 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS MIN. TYP. MAX. UNIT
Quadrature generator
f_osc
oscillator frequency range
920 −
2200 MHz
ΦN_osc
oscillator phase noise
at 10 kHz offset; −
note 1
−80 −75 dBc/Hz
∆Φ
absolute quadrature error
note 2
−
0
3
deg
f_LOOUT
output frequency
V_PEN = 0 V
V_PEN = V_CC
−
f_osc −
MHz
−
1_{⁄2fosc −}
MHz
V_{o(diff)(LOOUT)}
differential output voltage at pin LOOUT
R_L = 100 Ω
differential
−30 −22 −
dBm
Z_{o(diff)(LOOUT)}
differential output impedance at pin LOOUT
−
60 −
Ω
Conversion stage
R_i(diff)
L_i(diff)
P_i(max)
P_i(min)
∆G_v/∆V_(slope)
∆G_v(I-Q)
∆t_{d(g)(RF-IOUT)}
∆t_{d(g)(RF-QOUT)}
t_{d(g)(I-Q)(40)}
B_{(−1dB)(RF-IOUT)}
B_{(−1dB)(RF-QOUT)}
B_{(−3dB)(RF-IOUT)}
B_{(−3dB)(RF-QOUT)}
Z_o(IOUT)
Z_o(QOUT)
V_o(IOUT)
V_o(QOUT)
R_oL(IOUT)
R_oL(QOUT)
series real part of differential input
impedance at pins RFA and RFB
note 3
−
34 −
series inductance of differential input
impedance at pins RFA and RFB
note 3
−
5
−
maximum input power per channel
−
−22 −
minimum input power per channel
−
−52 −
AGC slope
voltage gain mismatch between I and Q
at G_{v(RF-IOUT)(min)} −
−
30 40
−
1
group delay variation per channel (40 MHz)
from RF input to pin IOUT
−
0.5 2
group delay variation per channel (40 MHz)
from RF input to pin QOUT
−
0.5 2
group delay mismatch per channel (40 MHz)
between I and Q
−
0
0.5
channel −1 dB bandwidth from RF input to
pin IOUT
40 50 −
channel −1 dB bandwidth from RF input to
pin QOUT
40 50 −
channel −3 dB bandwidth from RF input to
pin IOUT
70 80 −
channel −3 dB bandwidth from RF input to
pin QOUT
70 80 −
output impedance at pin IOUT
−
65 −
output impedance at pin QOUT
−
65 −
nominal output voltage level at pin IOUT
per channel
−
25 −
nominal output voltage level at pin QOUT per channel
−
25 −
resistive load at pin IOUT
400 −
−
resistive load at pin QOUT
400 −
−
Ω
nH
dBm
dBm
dB/V
dB
ns
ns
ns
MHz
MHz
MHz
MHz
Ω
Ω
dBmV
dBmV
Ω
Ω
1999 Aug 30
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