PMPB29XNE_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – 30 V, single N-channel Trench MOSFET

NXP Semiconductors
12
I_D
(A)
8
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PMPB29XNE
30 V, single N-channel Trench MOSFET
1.8
a
1.4
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4
1.0
T_j = 150 °C
T_j = 25 °C
0
0.0
0.5
1.0
V_DS > I_D × R_DSon
1.5
2.0
V_GS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.6
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
1.2
V_GS(th)
(V)
0.8
0.4
max
typ
min
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10⁴
C
(pF)
10³
10²
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C_iss
C_oss
C_rss
0.0
-60
0
60
I_D = 0.25 mA; V_DS = V_GS
120
180
T_j (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
10
10^-1
1
f = 1 MHz; V_GS = 0 V
10
10²
V_DS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMPB29XNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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