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PMPB29XNE_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, single N-channel Trench MOSFET | |||
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PMPB29XNE
30 V, single N-channel Trench MOSFET
26 November 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
⢠1 kV ESD protection
⢠Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
⢠Exposed drain pad for excellent thermal conduction
⢠Tin-plated, 100% solderable side pads for optical solder inspection
3. Applications
⢠Charging switch for portable devices
⢠DC-to-DC converters
⢠Power management in battery-driven portables
⢠Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ⤠5 s
VGS = 4.5 V; ID = 5 A; Tj = 25 °C
Min Typ Max Unit
-
-
30
V
-12 -
12
V
[1]
-
-
5
A
-
28
33
mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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