PHP20N06T Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
25
ID
(A) ₂₀
15
!==="'
10
VGS
(V)
8
VDD = 14 V
6
!===#
VDD = 44 V
10
4
5
Tj = 175 ^oC
Tj = 25 ^oC
0
0
2
4
6
8
10
VGS (V)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
2
0
0
5
10
15
QG (nC)
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
120
IS
(A) 100
80
!===#
60
Tj = 175 ^oC
40
Tj = 25 ^oC
20
0
0
0.5
1.0
1.5
2.0
VSD (V)
V_GS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
9397 750 07894
Product specification
Rev. 01 — 22 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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