PHP20N06T Datasheet, PDF (6/15 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
PHP20N06T; PHB20N06T
N-channel TrenchMOS™ transistor
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Source-drain diode
V_SD
source-drain (diode forward) I_S = 25 A; V_GS = 0 V;
−
voltage
Figure 15
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
−
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
−
Typ
Max
Unit
0.85
1.2
V
32
−
ns
120
−
nC
60
ID
(A) ₅₀
!==="#
VGS (V) =
16
12
40
10
9.0
30
8.0
7.5
20
7.0
6.5
6.0
10
5.0
0
0
2
4
6
8
10
VDS (V)
160
RDSon
(mΩ) ₁₄₀
120
100
80
60
40
5
!===#
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
180
VGS (V) =
RDSon
5.5 6 6.5 7
8
(mΩ) ¹⁶⁰
140
120
100
80
60
40
0
10
20
30
T_j = 25 °C
003aaa046
10
40
50
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
2.2
a2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa28
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07894
Product specification
Rev. 01 — 22 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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