PBSS5420D Datasheet, PDF (8/16 Pages) NXP Semiconductors – 20 V, 4 A PNP low VCEsat (BISS) transistor

Philips Semiconductors
PBSS5420D
20 V, 4 A PNP low V_CEsat (BISS) transistor
1000
h_FE
800
(1)
600
(2)
400
(3)
200
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0
−10^−1 −1
−10 −10² −10³ −10⁴ −10⁵
I_C (mA)
V_CE = −2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
−10
V_CEsat
(V)
−1
−10^−1
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(1)
(2)
(3)
−10^−2
−10^−3
−10^−1 −1
−10 −10² −10³ −10⁴ −10⁵
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
−1.6
V_BE
(mV)
−1.2
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−0.8
(1)
(2)
−0.4
(3)
0
−10^−1 −1
−10 −10² −10³ −10⁴ −10⁵
I_C (mA)
V_CE = −2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values
−10
V_CEsat
(V)
−1
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−10^−1
(1)
(2)
−10^−2
(3)
−10^−3
−10^−1 −1
−10 −10² −10³ −10⁴ −10⁵
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 10
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14027
Product data sheet
Rev. 01 — 7 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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