PBSS5420D Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V, 4 A PNP low VCEsat (BISS) transistor

PBSS5420D
20 V, 4 A PNP low V_CEsat (BISS) transistor
Rev. 01 — 7 April 2005
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD
plastic package.
NPN complement: PBSS4420D.
1.2 Features
s Very low collector-emitter saturation resistance
s Ultra low collector-emitter saturation voltage
s 4 A continuous collector current
s Up to 15 A peak current
s High efficiency leading to less heat generation
1.3 Applications
s Power management functions
s Charging circuits
s DC-to-DC conversion
s MOSFET gate driving
s Power switches (e.g. motors, fans)
s TFT backlight inverter
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
Min Typ Max
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage open base
-
collector current (DC)
[1] _-
peak collector current
single pulse;
-
t_p ≤ 1 ms
collector-emitter saturation I_C = −4 A;
[2] _-
resistance
I_B = −400 mA
-
−20
-
−4
-
−15
50
70
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
[2] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Unit
V
A
A
mΩ