PBSS4160V_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – 60 V, 1 A NPN low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low V_CEsat (BISS) transistor
mle131
2
(6) (5) (4) (3) (2) (1)
I_C
(A)
1.6
(7)
1.2
(8)
(9)
(10)
0.8
0.4
0
0
1
2
3
4
5
V_CE (V)
T_amb = 25 °C
(1) I_B = 60 mA
(2) I_B = 54 mA
(3) I_B = 48 mA
(4) I_B = 42 mA
(5) I_B = 36 mA
(6) I_B = 30 mA
(7) I_B = 24 mA
(8) I_B = 18 mA
(9) I_B = 12 mA
(10) I_B = 6 mA
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
10³
R_CEsat
(Ω)
10²
mle132
10
1
10^−1
10^−1
1
(1)
(2)
(3)
10
10²
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
10³
10⁴
I_C (mA)
Fig 10. Equivalent on-resistance as a function of
collector current; typical values
PBSS4160V_3
Product data sheet
Rev. 03 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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