PBSS4160V_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – 60 V, 1 A NPN low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4160V
60 V, 1 A NPN low V_CEsat (BISS) transistor
1
V_CEsat
(V)
10^−1
mle129
(1)
(2)
1.2
V_BEsat
(V)
0.8
0.4
mle134
(1)
(2)
(3)
10^−2
10^−1
1
10
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
10²
10³
10⁴
I_C (mA)
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
0
10^−1
1
10
10²
10³
10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS4160V_3
Product data sheet
Rev. 03 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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