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PBSS4032SN_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor
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NXP Semiconductors
PBSS4032SN
30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor
006aac286
006aac287
1
1
VCEsat
(V)
VCEsat
(V)
10−1
(1)
(2)
(3)
10−1
(1)
(2)
(3)
10−2
10−1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aac288
10−2
10−1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aac289
10
1
10−1
(1)
(2)
(3)
10−2
10−1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
10
1
10−1
(1)
(2)
(3)
10−2
10−1
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4032SN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 13 October 2010
© NXP B.V. 2010. All rights reserved.
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