PBSS4032SN_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor

PBSS4032SN
30 V, 5.7 A NPN/NPN low V_CEsat (BISS) transistor
Rev. 2 — 13 October 2010
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PBSS4032SN SOT96-1
Name
SO8
PNP/PNP
complement
PBSS4032SP
NPN/PNP
complement
PBSS4032SPN
1.2 Features and benefits
„ Low collector-emitter saturation voltage V_CEsat
„ Optimized switching time
„ High collector current capability I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ DC-to-DC conversion
„ Battery-driven devices
„ Power management
„ Charging circuits
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_CEO collector-emitter voltage open base
-
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
R_CEsat collector-emitter
saturation resistance
I_C = 4 A; I_B = 0.4 A ^[1] -
-
30
V
-
5.7 A
-
10
A
45
62.5 mΩ
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.