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PBSS306PZ Datasheet, PDF (8/14 Pages) NXP Semiconductors – 100 V, 4.1 A PNP low VCEsat (BISS) transistor
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Philips Semiconductors
−10
VCEsat
(V)
−1
006aaa647
PBSS306PZ
100 V, 4.1 A PNP low VCEsat (BISS) transistor
−10
VCEsat
(V)
−1
006aaa648
−10−1
(1)
(2)
(3)
−10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aaa650
10
1
(1)
(2)
(3)
10−1
10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
−10−1
(1)
(2)
−10−2
−10−1
−1
(3)
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aaa652
10
(1)
1
(2)
(3)
10−1
10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS306PZ_1
Product data sheet
Rev. 01 — 20 September 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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