PBSS306PZ Datasheet, PDF (1/14 Pages) NXP Semiconductors – 100 V, 4.1 A PNP low VCEsat (BISS) transistor

PBSS306PZ
100 V, 4.1 A PNP low V_CEsat (BISS) transistor
Rev. 01 — 20 September 2006
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS306NZ.
1.2 Features
I Low collector-emitter saturation voltage V_CEsat
I High collector current capability I_C and I_CM
I High collector current gain (h_FE) at high I_C
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High-voltage DC-to-DC conversion
I High-voltage MOSFET gate driving
I High-voltage motor control
I High-voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage open base
-
collector current
-
peak collector current
single pulse;
-
t_p ≤ 1 ms
collector-emitter saturation I_C = −4 A;
[1] _-
resistance
I_B = −400 mA
-
−100 V
-
−4.1 A
-
−8.2 A
56
80
mΩ
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.