NX3008PBKS_15 Datasheet, PDF (8/17 Pages) NXP Semiconductors – 30 V, 200 mA dual P-channel Trench MOSFET

NXP Semiconductors
NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET
-0.25
I_D
-4.5 V
-3 V
(A)
-0.20
-0.15
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-2.5 V
-10^-3
I_D
(A)
-10^-4
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(1)
(2) (3)
-0.10
-2 V
-10^-5
-0.05
0.00
0
-1
T_j = 25 °C
V_GS = -1.5 V
-2
-3
-4
V_DS (V)
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
-10^-6
0.0
-0.5
-1.0
-1.5
V_GS (V)
T_j = 25 °C; V_DS = -5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
14
R_DS (on)
(Ω)
12
(1)
(2)
(3)
10
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(4)
14
R_DS (on)
(Ω)
12
10
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8
8
6
6
(5)
(1)
4
4
(6)
(2)
2
2
0
0
-0.05 -0.10 -0.15 -0.20 -0.25
I_D (A)
T_j = 25 °C
(1) V_GS = -1.75 V
(2) V_GS = -2.0 V
(3) V_GS = -2.25 V
(4) V_GS = -2.5 V
(5) V_GS = -3.0 V
(6) V_GS = -4.5 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
0
0
-1
-2
-3
-4
-5
V_GS (A)
I_D = -200 mA
(1) T_j = 150 °C
(2) T_j = 25 °C
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NX3008PBKS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2011
© NXP B.V. 2011. All rights reserved.
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