NX3008PBKS_15 Datasheet, PDF (5/17 Pages) NXP Semiconductors – 30 V, 200 mA dual P-channel Trench MOSFET

NXP Semiconductors
NX3008PBKS
30 V, 200 mA dual P-channel Trench MOSFET
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Per device
R_th(j-a)
thermal resistance from junction to
ambient
Per transistor
R_th(j-a)
thermal resistance from junction to
ambient
R_th(j-sp)
thermal resistance from junction to
solder point
Conditions
in free air
in free air
Min Typ Max Unit
[1] _-
-
300 K/W
[1] _-
390 445 K/W
[2] _-
340 390 K/W
-
-
130 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².
10³
Z_th(j-a)
(K/W)
10²
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1 _0.05
0
0.02
10
0.01
017aaa034
1
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
FR4 PCB, standard footprint
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
NX3008PBKS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2011
© NXP B.V. 2011. All rights reserved.
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