BUK7660-100A_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
3
03aa29
a
2
1
0
-60
0
60
120
180
T_j (°C)
BUK7660-100A
N-channel TrenchMOS standard level FET
2500
C
(pF)
C_iss
2000
1500
1000
500
C_oss
C_rss
0
10^−2
10^−1
1
03nd03
10
10²
V_DS (V)
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
60
I_S
(A)
40
03nc96
T_j = 175 °C
T_j = 25 °C
20
0
0.0
0.5
1.0
1.5
V_SD (V)
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
BUK7660-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 February 2011
© NXP B.V. 2011. All rights reserved.
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