BUK7660-100A_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
120
I_der
(%)
80
03aa24
BUK7660-100A
N-channel TrenchMOS standard level FET
120
P_der
(%)
80
03na19
40
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
10³
I_D
(A)
10²
R_DSon = V_DS / I_D
10
P
1
t_p
δ=
T
t_p
t
T
10^−1
1
D.C.
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03nd04
t_p = 10 μs
100 μs
1 ms
10 ms
100 ms
10²
10³
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7660-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 February 2011
© NXP B.V. 2011. All rights reserved.
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