BUK758R3-40E_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK758R3-40E
N-channel TrenchMOS standard level FET
2
a
1.5
003aag816
1
0.5
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 13. Gate charge waveform definitions
10
V_GS
(V)
8
14 V
003aah177
10⁴
C
(pF)
003aah178
6
4
V_DS= 32V
2
0
0
5
10
15
20
25
Q_G (nC)
Fig. 14. Transient thermal impedance from junction to
mounting base as a function of pulse duration
C_iss
10³
C_oss
10²
10^-1
1
C_rss
10
10²
V_DS(V)
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK758R3-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
© NXP B.V. 2012. All rights reserved
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