BUK7535-55A_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7535-55A
N-channel TrenchMOS standard level FET
10
V_GS
(V)
8
V_DD = 14 V
6
4
2
0
0
10
03nb77
V_DD = 44 V
20
30
Q_G (nC)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
Fig 9. Gate-source voltage as a function of turn-on
gate charge; typical values
80
R_DSon
(mΩ)
70
5.5 6 _{6.5 7}
03nb82
V_GS (V) = 10
8
9
60
50
40
30
20
0
20
40
60
80
100
I_D (A)
Fig 10. Gate-source threshold voltage as a function of
junction temperature
2.4
a
03aa28
1.8
1.2
0.6
0
−60
0
60
120
180
T_j (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK7535-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 27 January 2011
© NXP B.V. 2011. All rights reserved.
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