BUK7535-100A Datasheet, PDF (8/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7535-100A; BUK7635-100A
TrenchMOS™ standard level FET
50
ID
(A)
40
30
03nd31
10
VGS
(V)
8
6
03nd29
VDD= 14V
VDD= 80V
20
4
Tj = 175 ^oC
Tj = 25 ^oC
10
2
0
0
2
4
6
8
VGS (V)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0
0
20
40 _{QG (nC)} 60
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
60
03nd28
IS
(A)
40
20
Tj = 175 ^oC
Tj = 25 ^oC
0
0.0
0.5
1.0 _{VSD (V)} 1.5
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 07829
Product specification
Rev. 01 — 02 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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