BUK7535-100A Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7535-100A; BUK7635-100A
TrenchMOS™ standard level FET
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Source-drain diode
V_SD
source-drain (diode forward) I_S = 25 A; V_GS = 0 V;
−
voltage
Figure 15
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
−
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
−
Typ
Max
Unit
0.85
1.2
V
67
−
ns
220
−
nC
140
ID
(A)
120
100
VGS (V) =10
03nd33
20
9
8
7.5
80
6.5
60
40
5.5
20
0
4.5
0
2
4
6
8
10
VDS (V)
35
RDSon
(mΩ)
30
03nd32
25
20
5
10
15 _{VGS (V)} 20
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
80
RDSon
5.5
VGS (V) = 8
6 6.5 7
(mΩ)
60
03nd34
10
40
20
0
0
T_j = 25 °C
50
100 _{ID (A)} 150
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
3
a _2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa29
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07829
Product specification
Rev. 01 — 02 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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