BUK7524_7624_55A_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7524-55A; BUK7624-55A
TrenchMOS™ standard level FET
80
ID
(A)
60
40
20
03nb69
Tj = 25 ^OC
Tj = 175 ^OC
10
VGS
(V)
8
6
4
2
VDD = 14 V
03nb67
VDD = 44 V
0
0
2
4
6
8
10
VGS (V)
0
0
10
20
30
40
QG (nC)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
120
IS
(A)
100
03nb66
80
Tj = 175 ^OC
60
40
Tj = 25 ^OC
20
0
0.0
0.5
1.0 _{VSD (V)} 1.5
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 08029
Product specification
Rev. 02 — 01 March 2001
© Philips Electronics N.V. 2001. All rights reserved.
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