BUK7524_7624_55A_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7524-55A; BUK7624-55A
TrenchMOS™ standard level FET
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Source-drain diode
V_SD
source-drain (diode forward) I_S = 25 A; V_GS = 0 V;
−
voltage
Figure 15
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
−
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
−
Typ
Max
Unit
0.85
1.2
V
49
−
ns
102
−
nC
ID ¹⁸⁰
(A)
160
140
120
100
80
60
40
20
0
0
VGS (V)=12
14 16
03nb71
18
20
11
9.5
8.5
7.5
6.5
5.5
4.5
2
4
6
8
10
VDS (V)
35
RDSon
(mΩ)
30
03nb70
25
20
15
10
6
8 10 12 14 16 18 20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
60
RDSon
(mΩ) _5.5
50
6 ^{6.5 7}
03nb72
8 ^{VGS (V) =10}
40
30
20
10
0
0 20 40 60 80 100 120 140
ID (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
2.2
a2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa28
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08029
Product specification
Rev. 02 — 01 March 2001
© Philips Electronics N.V. 2001. All rights reserved.
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