BUK7516-55A Datasheet, PDF (8/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7516-55A; BUK7616-55A
TrenchMOS™ standard level FET
100
ID ₉₀
(A)
80
Tj = 25 ^oC
03na31
70
60
50
Tj = 175 ^oC
40
30
20
10
0
0
2
4
6
8
10
VGS (V)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
10
VGS
(V) ⁹
8
7
6
5
4
3
2
1
0
0
03na33
VDD= 14V
VDD= 44V
10
20
30
40
50
60
QG (nC)
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
100
IS ₉₀
(A)
80
03na32
70
Tj = 175 ^oC
60
50
40
Tj = 25 ^oC
30
20
10
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD (V)
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 07682
Product specification
Rev. 01 — 18 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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