BUK7516-55A Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7516-55A; BUK7616-55A
TrenchMOS™ standard level FET
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Source-drain diode
V_SD
source-drain (diode forward) I_S = 25 A; V_GS = 0 V;
−
voltage
Figure 15
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
−
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
−
Typ
Max
Unit
0.85
1.2
V
48
−
ns
106
−
nC
250
ID
(A)
200
150
100
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VGS = 16 V
12 V
10 V
9V
8V
7V
50
6V
5V
0
4.5 V
0
2
4
6
8
10
VDS (V)
RDSon ⁴⁰
(mΩ) ₃₅
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30
25
20
15
10
5
0
4 6 8 10 12 14 16 18 20
VGS(V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
50
RDSon
(mΩ)
45
VGS = 6V 6.5 V 7 V
40
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8 V 9 V 10 V
35
30
25
20
15
10
0 20 40 60 80 100 120 140 160 180 200
ID (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
2.2
a
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
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60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07682
Product specification
Rev. 01 — 18 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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