BUK7511-55A Datasheet, PDF (8/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET
ID ¹⁴⁰
(A)
120
100
80
03nd21
10
VGS
(V)
8
6
03nd19
VDD = 14 V
VDD = 44 V
60
40
20
0
0
Tj = 175 ^oC
Tj = 25 ^oC
2
4
6 _{VGS (V)} 8
4
2
0
0
20
40
60 _{QG (nC)} 80
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
140
IS
(A)
120
03nd18
100
Tj = 175 ^oC
80
60
Tj = 25 ^oC
40
20
0
0.0
0.5
1.0 _{VSD (V)} 1.5
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 07817
Product specification
Rev. 01 — 1 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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