BUK7511-55A Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7511-55A; BUK7611-55A
TrenchMOS™ standard level FET
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Source-drain diode
V_SD
source-drain (diode forward) I_S = 25 A; V_GS = 0 V;
−
voltage
Figure 15
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
−
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
−
Typ
Max
Unit
0.85
1.2
V
62
−
ns
140
−
nC
ID ⁴⁰⁰
(A)
350
300
250
200
150
100
50
0
0
20
18
16
03nd23
14
12
VGS (V) = 10
9.5
8.5
7.5
6.5
5.5
4.5
2
4
6
8
10
VDS (V)
14
RDSon
(mΩ)
12
10
8
6
5
03nd22
10
15 _{VGS (V)} 20
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
22
RDSon
(mΩ) ₂₀
5.5 6 ^6.5 7
03nd24
8 ^{VGS (V) = 10}
18
16
14
12
10
8
6
0
50 100 150 200 250 300
ID (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
2.2
a2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa28
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07817
Product specification
Rev. 01 — 1 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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