BUK7240-100A Datasheet, PDF (8/13 Pages) NXP Semiconductors – TrenchMOS™ standard level FET

Philips Semiconductors
BUK7240-100A
TrenchMOS™ standard level FET
80
ID(A)
70
60
50
40
30
20
10
0
0
03na51
Tj = 175oC
Tj = 25oC
2
4
6
8
10
VGS(V)
V_DS = 25 V
Fig 13. Transfer characteristics; typical values.
10
VGS(V)
9
8
7
6
5
4
3
2
1
0
0
03na53
VDS= 14(V)
VDS= 80(V)
20
40 QG(nC) 60
T_j = 25 °C; I_D = 25 A
Fig 14. Turn-on gate charge characteristics; typical
values.
100
IS(A)
90
80
70
60
50
40
30
20
10
0
0.0
03na52
Tj = 175oC
Tj = 25oC
0.5
1.0 _VSD(V) 1.5
V_GS = 0 V
Fig 15. Reverse diode current; typical values.
9397 750 07572
Product specification
Rev. 01 — 03 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
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