BUK7240-100A Datasheet, PDF (6/13 Pages) NXP Semiconductors – TrenchMOS™ standard level FET

Philips Semiconductors
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Source-drain diode
V_SD
source-drain (diode forward)
voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A;V_GS = 0 V;
Figure 15
I_S = 17 A; dI_S/dt = −100 A/µs
V_GS = −10 V; V_DS = 25 V
BUK7240-100A
TrenchMOS™ standard level FET
Min
Typ
Max
Unit
−
0.85
1.2
V
−
70
−
ns
−
240
−
nC
120
ID(A)
10
100 ^{VGS= 20(V)}
80
60
40
20
0
0
2
4
6
03na56
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
8 _VDS(V)10
50
RDSon
(mOhm)
45
03na54
40
35
30
25
20
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
VGS(V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. On-state resistance: typical values.
100
RDSon
(mOhm) ₉₀
80
70
60
50
40
30
20
0
T_j = 25 °C
VGS= 6(V)
6.5 7
03na57
8
10
20 40 60 80 100 120
ID(A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
3
a _2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa29
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07572
Product specification
Rev. 01 — 03 October 2000
© Philips Electronics N.V. 2000. All rights reserved.
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