BUK7227-100B_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7227-100B
N-channel TrenchMOS standard level FET
100
I_D
(A)
75
50
25
0
0
03nl26
T_j = 185 °C
T_j = 25 °C
2
4
6
8
V_GS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
10
max
typ
min
03no98
80
150
220
Tj (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
60
R_DSon
(mΩ)
Label is V_GS (V)
03nl29
2.8
a
50
6 6.5 7 8 10 20
2.1
03np02
40
1.4
30
0.7
20
10
0
35
70
105
140
I_D (A)
0
-60
10
80
150
220
T_j (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK7227-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 February 2011
© NXP B.V. 2011. All rights reserved.
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