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BUK7227-100B_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
NXP Semiconductors
BUK7227-100B
N-channel TrenchMOS standard level FET
140
ID
(A)
105
Label is VGS (V)
20
12
10
03nl28
9
8.5
8
7.5
7
70
6.5
6
35
5.5
5
4.5
0
0
2
4
6
8
10
VDS (V)
35
RDSon
(mΩ)
30
03nl27
25
20
5
10
15
20
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10−1
ID
(A)
10−2
10−3
10−4
03aa35
min typ max
40
gfs
(S)
30
20
03nl25
10
10−5
10−6
0
2
4
6
VGS (V)
0
0
20
40
60
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7227-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 February 2011
© NXP B.V. 2011. All rights reserved.
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