BUK7219-55A_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7219-55A
N-channel TrenchMOS standard level FET
2.4
a
1.8
03aa28
1.2
0.6
0
−60
0
60
120
180
T_j (°C)
100
I_S
(A)
80
60
40
20
0
0.0
T_j = 175 °C
0.5
03na32
T_j = 25 °C
1.0
1.5
V_SD (V)
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
3000
C
(pF)
2500
2000
Fig 14. Reverse diode current as a function of reverse
diode voltage; typical values
03na38
C_iss
1500
1000
C_oss
500
0
10^−2
10^−1
C_rss
1
10
10²
V_DS (V)
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
BUK7219-55A_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 3 February 2010
© NXP B.V. 2010. All rights reserved.
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