BUK7219-55A_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7219-55A
N-channel TrenchMOS standard level FET
100
I_D
(A)
80
03na31
60
40
20
0
0
T_j = 175 °C
2
4
T_j = 25 °C
6
8
10
V_GS (V)
10
V_GS
(V)
8
6
4
2
0
0
V_DD = 14 V
03na33
V_DD = 44 V
20
40
60
Q_G (nC)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values
gate charge; typical values
5
V_GS(th)
(V)
4
max
03aa32
35
RDSon
(mΩ)
V_GS (V) = 6
30
6.5 7
03na37
8
9 10
3
typ
25
2
min
20
1
15
0
−60
0
60
120
180
T_j (°C)
10
0
50
100
150
200
ID (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
BUK7219-55A_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 3 February 2010
© NXP B.V. 2010. All rights reserved.
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