BUK72150-55A Datasheet, PDF (8/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK72150-55A
TrenchMOS™ standard level FET
10
03np19
10
03np17
ID
VGS
(A)
(V)
8
8
VDD = 14 V
VDD = 44 V
6
6
4
4
2
Tj = 175 °C
Tj = 25 °C
0
0
3
6 _{VGS (V)} 9
2
0
0
2
4 _QG(nC) 6
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 3 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
60
IS
(A)
40
Tj = 175 °C
Tj = 25 °C
20
03np16
0
0
0.5
1
1.5
2
2.5
VSD (V)
V_GS = 0 V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
9397 750 12335
Product data
Rev. 02 — 20 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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