BUK72150-55A Datasheet, PDF (2/12 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK72150-55A
TrenchMOS™ standard level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
BUK72150-55A
D-PAK
Plastic single-ended surface mounted package (Philips version of D-PAK); SOT428
3 leads (one lead cropped).
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max Unit
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V;
Figure 2 and 3
-
55
V
-
55
V
-
±20
V
-
11
A
I_DM
peak drain current
T_mb = 100 °C; V_GS = 10 V; Figure 2
-
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
-
Figure 3
7
A
44
A
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 25 °C; Figure 1
-
36
W
−55
+175 °C
−55
+175 °C
I_DR
reverse drain current (DC)
I_DRM
peak reverse drain current
Avalanche ruggedness
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
-
11
A
-
44
A
E_DS(AL)S
non-repetitive drain-source
avalanche energy
unclamped inductive load; I_D = 11 A;
-
V_DS ≤ 55 V; V_GS = 10 V;
R_GS = 50 Ω; starting T_j = 25 °C
16
mJ
9397 750 12335
Product data
Rev. 02 — 20 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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