BUK7214-75B Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7214-75B
N-channel TrenchMOS standard level FET
100
I_D
(A)
75
50
25
0
0
03nl15
T_j = 185 °C
2
4
T_j = 25 °C
6
8
V_GS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
10
max
typ
min
03no98
80
150
220
Tj (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
03nl18
30
2.4
R_DSon
6 6.5 7
8
10 20
(mΩ)
a
03np01
20
1.6
10
Label is V_GS (V)
0
0
50
100
150
200
250
I_D (A)
0.8
0
−60
10
80
150 _{Tj (°C)} 220
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK7214-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 3 February 2011
© NXP B.V. 2011. All rights reserved.
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