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BUK7214-75B Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
NXP Semiconductors
BUK7214-75B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
LD
internal drain inductance
LS
internal source inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 185 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
VDS = 75 V; VGS = 0 V; Tj = 185 °C
VDS = 75 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 185 °C;
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
ID = 25 A; VDS = 60 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 25 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
measured from drain to centre of
die ; Tj = 25 °C
measured from source lead to source
bond pad ; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
75 -
-
V
70 -
-
V
0.9 -
-
V
2
3
4
V
-
-
4.4 V
-
-
500 µA
-
0.02 1
µA
-
2
100 nA
-
2
100 nA
-
-
33 mΩ
-
12.6 14 mΩ
-
41
-
nC
-
9
-
nC
-
15 -
nC
-
1959 2612 pF
-
326 391 pF
-
159 218 pF
-
18
-
ns
-
114 -
ns
-
52
-
ns
-
45
-
ns
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
74
-
ns
-
94
-
nC
BUK7214-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 3 February 2011
© NXP B.V. 2011. All rights reserved.
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