BUK663R7-75C_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
BUK663R7-75C
N-channel TrenchMOS FET
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
10^-6
0
003aad806
min typ max
1
2
3
4
V_GS (V)
4
V_GS(th)
(V)
3
003aae542
max @1mA
2
typ @1mA
min @2.5mA
1
0
-60
0
60
120
180
T_j (°C)
Fig 9. Sub-threshold drain current as a function of
gate-source voltage
2.4
a
03aa28
1.8
1.2
0.6
Fig 10. Gate-source threshold voltage as a function of
junction temperature
15
R_DSon
(mΩ)
3.8
V_GS(V) = 3.6
4.0
12
003aae423
9
6
4.5
5.0
6.0
3
10
0
−60
0
60
120
180
T_j (°C)
0
0
50
100
150 _ID(A) 200
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
BUK663R7-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 September 2010
© NXP B.V. 2010. All rights reserved.
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